Z. L. Xie

Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors

Bin Liu, R. Zhang, Jian‐Guo Zheng et al. · Applied Physics Letters · 2011 · 43 citations

Materials Science, Wide-bandgap Semiconductor, Aluminium Nitride +12

Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates

Bo Liu, Rong Zhang, Z. L. Xie et al. · Applied Physics Letters · 2007 · 42 citations

Polarization Fields, Wide-bandgap Semiconductor, Engineering +18

Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN

W. S. Yan, R. Zhang, X. Q. Xiu et al. · Applied Physics Letters · 2007 · 38 citations

Materials Science, Aluminium Nitride, Engineering +14

Al incorporation, structural and optical properties of AlxGa1−xN (0.13⩽x⩽0.8) alloys grown by MOCVD

Bo Liu, Rong Zhang, Z. L. Xie et al. · Journal of Crystal Growth · 2008 · 35 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

D.J. Chen, Bo Liu, Hai Lu et al. · IEEE Electron Device Letters · 2009 · 34 citations

Wide-bandgap Semiconductor, Engineering, Ingan Layer +19