Hai Lu

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

Materials Science, Ii-vi Semiconductor, Wurtzite-structured Inn Grown +15

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Xia Wan, Yang Xu, Hongwei Guo et al. · npj 2D Materials and Applications · 2017 · 296 citations · Full text

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Hai Lu, W. J. Schaff, Jeonghyun Hwang et al. · Applied Physics Letters · 2001 · 281 citations

Materials Engineering, Materials Science, Semiconductors +14

Effects of electron concentration on the optical absorption edge of InN

Junqiao Wu, W. Walukiewicz, S. X. Li et al. · Applied Physics Letters · 2004 · 231 citations

Optical Materials, Engineering, Intrinsic Band Gap +17

Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga₂O₃/ZnO Isotype Heterostructures

Xuanhu Chen, Yang Xu, Dong Zhou et al. · ACS Applied Materials & Interfaces · 2017 · 215 citations