Journal of Crystal Growth · 2015 · 17 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEarly-stage GrowthEpitaxial MaterialsGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesMetalorganic Vapor Phase EpitaxyPhotoluminescencePhotoluminescence SpectroscopySemiconductor Light-emitting Materials
In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.
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