K. Haberland

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

J.‐T. Zettler, K. Haberland, M. Zorn et al. · Journal of Crystal Growth · 1998 · 57 citations

Materials Science, Real-time Monitoring, Optical Materials +13

In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature

A. Dadgar, F. Schulze, T. Zettler et al. · Journal of Crystal Growth · 2004 · 41 citations

Materials Science, Wide-bandgap Semiconductor, Situ Measurements +6

Spectroscopic process sensors in MOVPE device production

K. Haberland, P. Kurpas, Markus Pristovsek et al. · Applied Physics A · 1999 · 35 citations

Engineering, Spectroscopy, Applied Physics +5

MOVPE process development for 650nm VCSELS using optical in-situ techniques

M. Zorn, K. Haberland, Andrea Knigge et al. · Journal of Crystal Growth · 2002 · 32 citations

Materials Science, Optical Materials, Engineering +5

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Veit Hoffmann, A. Knauer, Claudia C. Brunner et al. · Journal of Crystal Growth · 2010 · 31 citations

Wafer Surface Temperature, Wide-bandgap Semiconductor, Electrical Engineering +7