Veit Hoffmann

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Tim Wernicke, Lukas Schade, Carsten Netzel et al. · Semiconductor Science and Technology · 2012 · 143 citations

Engineering, Materials Science, Physics +17

Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

Frank Brunner, Veit Hoffmann, A. Knauer et al. · Journal of Crystal Growth · 2006 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +8

DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings

Ji Hye Kang, H. Wenzel, Veit Hoffmann et al. · IEEE Photonics Technology Letters · 2017 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Surface morphology of homoepitaxial GaN grown on non‐ and semipolar GaN substrates

Tim Wernicke, Simon Ploch, Veit Hoffmann et al. · physica status solidi (b) · 2011 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap

Carsten Netzel, Veit Hoffmann, Tim Wernicke et al. · Journal of Applied Physics · 2010 · 36 citations

Engineering, Electrical Engineering, Materials Science +17