Simon Ploch - Concepedia

Author

Simon Ploch

Technische Universität Berlin

Also Known As

Ploch, Simon, S. Ploch, Simon Ploch

Publications

519

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Ferdinand-Braun-Institut University of Freiburg Fraunhofer Institute for Applied Solid State Physics Otto-von-Guericke University Magdeburg

About

Simon Ploch is an author at Technische Universität Berlin specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	292
2	Applied Physics	10	10	292
3	Materials Science	9	9	266
4	Electrical Engineering	3	3	103
5	Materials Engineering	1	1	44

Simon Ploch

Publications

433

Citations

H-Index

Page 1

	Year	Citations
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells Tim Wernicke, Lukas Schade, Carsten Netzel, Semiconductor Science and Technology	2012	141
Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy Simon Ploch, Tim Wernicke, Duc V. Dinh, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorGrowth TemperatureEngineeringCrystalline Defects	2012	50
Crystal orientation of GaN layers on (1010) <i>m</i>‐plane sapphire Martin Frentrup, Simon Ploch, Markus Pristovsek, physica status solidi (b) Materials ScienceEngineeringPhysicsCrystalline DefectsSurface Science	2011	49
Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy Simon Ploch, Martin Frentrup, Tim Wernicke, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringSurface Science	2010	44
Surface morphology of homoepitaxial GaN grown on non‐ and semipolar GaN substrates Tim Wernicke, Simon Ploch, Veit Hoffmann, physica status solidi (b) Wide-bandgap SemiconductorEngineeringAbstract Gan LayersReactor PressureSemiconductors	2011	36
On the optical polarization properties of semipolar InGaN quantum wells Lukas Schade, Ulrich T. Schwarz, Tim Wernicke, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	2011	26
Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN Simon Ploch, Tim Wernicke, Martin Frentrup, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSevere Plastic DeformationIndium Incorporation EfficiencyMicrostructure-strength Relationship	2012	23
Volmer‐Weber growth mode of InN quantum dots on GaN by MOVPE Simon Ploch, Markus Pristovsek, Michael Kneissl Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorEngineeringQuantum Dot VolumeTrimethylindium Partial PressureSemiconductor Nanostructures	2009	21
Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire Martin Feneberg, Michael Winkler, Juliane U. Klamser, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorOptical MaterialsEngineeringM-plane Sapphire	2015	18
Growth and characterization of stacking fault reduced GaN $(1\,0\,\bar{1}\,3)$ on sapphire J. Bläsing, V. Holý, A. Dadgar, Journal of Physics D Applied Physics Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsPhysics	2013	15

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