Duc V. Dinh - Concepedia

Author

Duc V. Dinh

University College Cork ORCID

Also Known As

D. V. Dinh, D.V. Dinh, Dinh, Duc V., Dinh, van Duc, Duc Dinh, Duc V Dinh, Duc V. Dinh, DucV. Dinh, Van-Duc Dinh

Publications

774

Citations

H-Index

Concepts

All Affiliations

University College Cork Technische Universität Berlin Nagoya University Universität Ulm Sungkyunkwan University

About

Duc V. Dinh is an author at University College Cork specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	396
2	Applied Physics	13	18	396
3	Electrical Engineering	10	11	234
4	Natural Sciences	1	1	14
5	Chemistry	1	1	14

Duc V. Dinh

Publications

590

Citations

H-Index

Page 1

	Year	Citations
Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy Simon Ploch, Tim Wernicke, Duc V. Dinh, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorGrowth TemperatureEngineeringCrystalline Defects	2012	50
GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes Duc V. Dinh, Zhiheng Quan, Brendan Roycroft, Optics Letters	2016	47
Lattice parameters of Sc<i>x</i>Al1−<i>x</i>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Applied Physics Letters	2023	46
Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes M. Haemmer, Brendan Roycroft, Mahbub Akhter, IEEE Photonics Technology Letters Semipolar LedsEngineeringOptoelectronic DevicesQuantum EngineeringSemiconductors	2018	39
Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy D. Skuridina, Duc V. Dinh, Bertrand Lacroix, Journal of Applied Physics SemiconductorsGroup-iii PolarityElectrical EngineeringWide-bandgap SemiconductorEngineering	2013	35
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates Duc V. Dinh, S.M. Kang, Jae‐Hun Yang, Journal of Crystal Growth Wide-bandgap SemiconductorField Emission PropertiesElectrical EngineeringEngineeringNanotechnology	2008	34
Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN Pietro Pampili, Duc V. Dinh, Vitaly Z. Zubialevich, Journal of Physics D Applied Physics	2018	31
Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy Duc V. Dinh, Michele Conroy, Vitaly Z. Zubialevich, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideEngineeringCrystal Growth Technology	2014	30
Growth and characterizations of semipolar (112¯2) InN Duc V. Dinh, D. Skuridina, Sergej Solopow, Journal of Applied Physics SemiconductorsMaterials ScienceWide-bandgap SemiconductorEpitaxial GrowthInn Layers	2012	26
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth Jie Yang, Sang-Ki Kang, Duc V. Dinh, Thin Solid Films Materials EngineeringLayer ThicknessElectrical EngineeringGan Epitaxial GrowthEngineering	2009	23

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