Duc V. Dinh

Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy

Simon Ploch, Tim Wernicke, Duc V. Dinh et al. · Journal of Applied Physics · 2012 · 50 citations

Materials Science, Wide-bandgap Semiconductor, Growth Temperature +10

GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

Duc V. Dinh, Zhiheng Quan, Brendan Roycroft et al. · Optics Letters · 2016 · 47 citations · Full text

Lattice parameters of Sc<i>x</i>Al1−<i>x</i>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar et al. · Applied Physics Letters · 2023 · 46 citations · Full text

Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes

M. Haemmer, Brendan Roycroft, Mahbub Akhter et al. · IEEE Photonics Technology Letters · 2018 · 39 citations

Semipolar Leds, Engineering, Optoelectronic Devices +17

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

D. Skuridina, Duc V. Dinh, Bertrand Lacroix et al. · Journal of Applied Physics · 2013 · 35 citations

Semiconductors, Group-iii Polarity, Electrical Engineering +13