Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons

R. Houdré, J. L. Gibernon, P. Pellandini, +6

Physical review. B, Condensed matter

Categoryquantum ElectronicsEngineeringCavity QedSaturation DensitySemiconductors +18

Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration

Diarmuid Byrne, J.P. Engelstaedter, Weihua Guo, +6

IEEE Journal of Selected Topics in Quantum Electronics

PhotonicsEngineeringPhysicsSemiconductor LasersOptical Properties +11

A Novel Two-Section Tunable Discrete Mode Fabry-PÉrot Laser Exhibiting Nanosecond Wavelength Switching

Richard Phelan, Weihua Guo, Qiaoyin Lu, +9

IEEE Journal of Quantum Electronics

PhotonicsTunable Laser DiodeEngineeringLaser RidgeOptical Properties +8

InP-Based Active and Passive Components for Communication Systems at 2 μm

N. Ye, Michael R. Gleeson, Muhammad Usman Sadiq, +15

Journal of Lightwave Technology

Optical MaterialsEngineeringFiber OpticsHigh-power LasersCommunication Systems +20

GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

Duc V. Dinh, Zhiheng Quan, Brendan Roycroft, +2

Optics Letters

Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates

Ruggero Loi, James O’Callaghan, Brendan Roycroft, +7

IEEE photonics journal

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics +22

Practical Design of Lensed Fibers for Semiconductor Laser Packaging Using Laser Welding Technique

Jeong Hwan Song, Harendra N. J. Fernando, Brendan Roycroft, +2

Journal of Lightwave Technology

Optical MaterialsEngineeringMechanical EngineeringLaser WeldingFiber-optic Communication +14

40 Gb/s WDM Transmission Over 1.15-km HC-PBGF Using an InP-Based Mach-Zehnder Modulator at 2 μm

Muhammad Usman Sadiq, Hongyu Zhang, James O’Callaghan, +17

Journal of Lightwave Technology

Optical MaterialsEngineeringOptical Transmission SystemOptical Modulation1.15-Km Hc-pbgf Using +20

Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes

M. Haemmer, Brendan Roycroft, Mahbub Akhter, +5

IEEE Photonics Technology Letters

Semipolar LedsEngineeringOptoelectronic DevicesQuantum EngineeringSemiconductors +15

Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

J. O’Callaghan, Ruggero Loi, Enrica Mura, +9

Optical Materials Express