Jonas Lähnemann

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Werner Bergbauer, Ch. Kölper, N. Linder et al. · Nanotechnology · 2010 · 143 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

U. Jahn, Jonas Lähnemann, Carsten Pfüller et al. · Physical Review B · 2012 · 126 citations · Full text

Direct experimental determination of the spontaneous polarization of GaN

Jonas Lähnemann, O. Brandt, U. Jahn et al. · Physical Review B · 2012 · 115 citations · Full text

Semiconductors, Plate Capacitor, Wide-bandgap Semiconductor +13

Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)

Emmanouil Dimakis, Jonas Lähnemann, U. Jahn et al. · Crystal Growth & Design · 2011 · 96 citations

Engineering, Semiconductor Nanostructures, Nanostructure Synthesis +17

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Patrick Vogt, O. Brandt, Henning Riechert et al. · Physical Review Letters · 2017 · 87 citations

Engineering, Crystal Growth Technology, Chemistry +19