Concepedia

Author

J.‐T. Zettler

Technische Universität Berlin

Also Known As

Angermann, H., J. -T. Zettler, J. T. Zettler, J. Th. Zettler, J. Zettler, J.-T Zettler, J.-T. Zettler, J.-Th. Zettler, J.T. Zettler, J.‐T. Zettler

97

Publications

1.8K

Citations

28

H-Index

62

Concepts

All Affiliations

Technische Universität BerlinFerdinand-Braun-InstitutFraunhofer Institute for Telecommunications, Heinrich Hertz InstitutePaul Drude Institute for Solid State Electronics
JZ

About

J.‐T. Zettler is an author at Technische Universität Berlin specializing in engineering, applied physics, and optical properties.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

28

61

1.7K

2

Applied Physics

28

59

1.7K

3

Natural Sciences

8

8

206

4

Education

1

1

13

5

Chemical Engineering

1

1

37

J.‐T. Zettler

×

62

Publications

1.7K

Citations

28

H-Index

YearCitations

Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

J.‐T. Zettler

Progress in Crystal Growth and Characterization of Materials

1997

122

Real-time analysis of III–V-semiconductor epitaxial growth

W. Richter, J.‐T. Zettler

Applied Surface Science

1996

78

Correlation of InGaP(001) surface structure during growth and bulk ordering

M. Zorn, P. Kurpas, A. Shkrebtii,

Physical review. B, Condensed matter

1999

64

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

J.‐T. Zettler, K. Haberland, M. Zorn,

Journal of Crystal Growth

1998

57

Temperature dependence of the InP(001) bulk and surface dielectric function

M. Zorn, T. Trepk, J.‐T. Zettler,

Applied Physics A

1997

55

Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

Frank Brunner, A. Knauer, Tony Schenk,

Journal of Crystal Growth

2008

54

<i>In situ</i> monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

S. Peters, T. Schmidtling, T. Trepk,

Journal of Applied Physics

2000

52

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

J.‐T. Zettler, J. Rumberg, K. Ploska,

physica status solidi (a)

1995

43

Surface processes before and during growth of GaAs (001)

K. Ploska, J.‐T. Zettler, W. Richter,

Journal of Crystal Growth

1994

41

Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)

J.‐T. Zettler, T. Wethkamp, M. Zorn,

Applied Physics Letters

1995

41

Page 1