Modelling of X-ray diffraction curves for GaN nanowires on Si(1 1 1)

X-ray line broadening from filed aluminium and wolfram

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Natural Sciences, Materials Science, Spectroscopy +5

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

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Natural Sciences, Materials Engineering, Materials Science +15

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 291 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Kris A. Bertness, Alexana Roshko, Lorelle M. Mansfield et al. · Journal of Crystal Growth · 2008 · 162 citations

Natural Sciences, Materials Engineering, Materials Science +16

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Florian Furtmayr, Martin Vielemeyer, M. Stutzmann et al. · Journal of Applied Physics · 2008 · 148 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17