Marta Sobańska

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

A. Wierzbicka, Z. R. Żytkiewicz, S. Kret et al. · Nanotechnology · 2012 · 84 citations

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

Łukasz Janicki, M. Gładysiewicz, J. Misiewicz et al. · Applied Surface Science · 2016 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Plasma‐assisted MBE growth of GaN on Si(111) substrates

Marta Sobańska, K. Kłosek, Z. R. Żytkiewicz et al. · Crystal Research and Technology · 2011 · 32 citations

Semiconductors, Materials Science, Engineering +8

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

J. Borysiuk, Z. R. Żytkiewicz, Marta Sobańska et al. · Nanotechnology · 2014 · 32 citations

Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism

Marta Sobańska, G. Tchutchulashvili, K. Kłosek et al. · Crystal Growth & Design · 2016 · 31 citations

Semiconductors, Wide-bandgap Semiconductor, Engineering +12