Marta Sobańska - Concepedia

Author

Marta Sobańska

Polish Academy of Sciences ORCID

Also Known As

M Sobanska, M Sobańska, M. Sobanska, M. Sobańska, Maria Sobanska, Marta Sobanska, Marta Sobańska, Sobanska, Marta

Publications

732

Citations

H-Index

Concepts

All Affiliations

Polish Academy of Sciences Institute of Physics University of Warsaw Wrocław University of Science and Technology Institute of High Pressure Physics

About

Marta Sobańska is an author at Polish Academy of Sciences specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	373
2	Applied Physics	13	19	400
3	Materials Science	10	10	204
4	Electrical Engineering	6	6	127
5	Materials Engineering	2	2	24

Marta Sobańska

Publications

618

Citations

H-Index

Page 1

	Year	Citations
Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate A. Wierzbicka, Z. R. Żytkiewicz, S. Kret, Nanotechnology	2012	84
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface Łukasz Janicki, M. Gładysiewicz, J. Misiewicz, Applied Surface Science Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsSurface Science	2016	34
Plasma‐assisted MBE growth of GaN on Si(111) substrates Marta Sobańska, K. Kłosek, Z. R. Żytkiewicz, Crystal Research and Technology SemiconductorsMaterials ScienceEngineeringSurface ScienceApplied Physics	2011	32
Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate J. Borysiuk, Z. R. Żytkiewicz, Marta Sobańska, Nanotechnology	2014	32
Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism Marta Sobańska, G. Tchutchulashvili, K. Kłosek, Crystal Growth & Design SemiconductorsWide-bandgap SemiconductorEngineeringNucleation MechanismCrystalline Defects	2016	31
Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy Marta Sobańska, J. Borysiuk, S. Kret, Journal of Applied Physics Materials ScienceAluminium NitrideEpitaxial GrowthEngineeringAmorphous Al2o3	2014	30
Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy K. Kłosek, Marta Sobańska, G. Tchutchulashvili, Thin Solid Films Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringApplied Physics	2013	28
Self-assembled growth of GaN nanowires on amorphous Al<sub><i>x</i></sub>O<sub><i>y</i></sub>: from nucleation to the formation of dense nanowire ensembles Marta Sobańska, Sergio Fernández‐Garrido, Z. R. Żytkiewicz, Nanotechnology Materials ScienceAluminium NitrideEngineeringGan Surface AreaPhysics	2016	28
Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers Marta Sobańska, A. Wierzbicka, K. Kłosek, Journal of Crystal Growth Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringAmorphous Al2o3 Buffers	2014	27
Dynamics of stacking faults luminescence in GaN/Si nanowires K.P. Korona, A. Reszka, Marta Sobańska, Journal of Luminescence Faults LuminescencePhysicsAluminum Gallium NitrideApplied PhysicsGan Power Device	2014	27

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