G. Tchutchulashvili

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

A. Wierzbicka, Z. R. Żytkiewicz, S. Kret et al. · Nanotechnology · 2012 · 84 citations

Natural Sciences, Materials Engineering, Materials Science +17

Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism

Marta Sobańska, G. Tchutchulashvili, K. Kłosek et al. · Crystal Growth & Design · 2016 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +17

Self-assembled growth of GaN nanowires on amorphous Al_<i>x</i>O_<i>y</i>: from nucleation to the formation of dense nanowire ensembles

Marta Sobańska, Sergio Fernández‐Garrido, Z. R. Żytkiewicz et al. · Nanotechnology · 2016 · 29 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

K. Kłosek, Marta Sobańska, G. Tchutchulashvili et al. · Thin Solid Films · 2013 · 28 citations

Natural Sciences, Materials Science, Physics +12

Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers

Marta Sobańska, A. Wierzbicka, K. Kłosek et al. · Journal of Crystal Growth · 2014 · 27 citations

Engineering, Materials Engineering, Materials Science +17