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Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorEmitted Light IntensityOptoelectronics