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Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers

Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringAmorphous Al2o3 BuffersNanotechnologyApplied PhysicsAluminum Gallium NitrideGan Power DeviceSilicon SubstratesMicroelectronicsGan NanowiresCategoryiii-v Semiconductor