A. Wierzbicka

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

A. Wierzbicka, Z. R. Żytkiewicz, S. Kret et al. · Nanotechnology · 2012 · 84 citations

Quantum efficiency of the down-conversion process in Bi3+–Yb3+ and Ce3+–Yb3+ co-doped garnets

Yaroslav Zhydachevskyy, I.I. Syvorotka, Volodymyr Tsiumra et al. · Solar Energy Materials and Solar Cells · 2018 · 35 citations

Materials Science, Quantum Science, Down-conversion Process +8

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

J. Borysiuk, Z. R. Żytkiewicz, Marta Sobańska et al. · Nanotechnology · 2014 · 32 citations

Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers

Marta Sobańska, A. Wierzbicka, K. Kłosek et al. · Journal of Crystal Growth · 2014 · 27 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +10

Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Aleksandra Seweryn, R. Pietruszka, B.S. Witkowski et al. · Crystals · 2019 · 24 citations · Full text

Aluminium Nitride, Engineering, Oxygen Precursors +18