Alexana Roshko - Concepedia

Author

Alexana Roshko

National Institute of Standards and Technology ORCID

Also Known As

A Roshko, A. Roshko, ALEXANA ROSHKO, Alexana Roshko, Roshko, Alexana

134

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

National Institute of Standards and Technology Physical Measurement Laboratory Massachusetts Institute of Technology University of Colorado Boulder DuPont (United States)

About

Alexana Roshko is an author at National Institute of Standards and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	44	2.1K
2	Applied Physics	23	40	2K
3	Natural Sciences	3	3	61
4	Chemistry	2	2	110
5	Medicine	1	1	50

Alexana Roshko

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy Kris A. Bertness, Alexana Roshko, Lorelle M. Mansfield, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringSpontaneous GrowthEngineeringNanotechnology	2008	161
Spontaneously grown GaN and AlGaN nanowires Kris A. Bertness, Alexana Roshko, Norman A. Sanford, Journal of Crystal Growth Algan NanowiresEngineeringNanotechnologyAluminum Gallium NitrideApplied Physics	2006	159
New Constraints on Dark Photon Dark Matter with Superconducting Nanowire Detectors in an Optical Haloscope Jeff Chiles, Ilya Charaev, Robert Lasenby, Physical Review Letters Quantum PhotonicsEngineeringCosmic Neutrino BackgroundDirect DetectionDetector Physics	2022	140
Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy John B. Schlager, Kris A. Bertness, Paul T. Blanchard, Journal of Applied Physics EngineeringOptoelectronic DevicesTime-resolved PhotoluminescenceSemiconductor NanostructuresTrpl Lifetimes	2008	124
Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy Kris A. Bertness, Aric W. Sanders, Devin M. Rourke, Advanced Functional Materials Materials ScienceEngineeringNanowire GrowthNanomaterialsNanotechnology	2010	118
Nucleation conditions for catalyst-free GaN nanowires K. A. Bertness, Alexana Roshko, Lorelle M. Mansfield, Journal of Crystal Growth EngineeringNanotechnologyApplied PhysicsGan Power DeviceNucleation Conditions	2006	106
Catalyst-free growth of GaN nanowires Kris A. Bertness, Norman A. Sanford, J. M. Barker, Journal of Electronic Materials Materials ScienceEngineeringNanotechnologyApplied PhysicsGan Power Device	2006	102
Epitaxial nucleation and growth of chemically derived Ba2YCu3O7−<i>x</i> thin films on (001) SrTiO3 Paul C. McIntyre, Michael J. Cima, Alexana Roshko Journal of Applied Physics EngineeringEpitaxial NucleationCrystal Growth TechnologyThin Film Process TechnologyChemistry	1995	100
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy Norman A. Sanford, Paul T. Blanchard, K. A. Bertness, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTransient PhotoconductivityOptoelectronic DevicesSemiconductors	2010	98
On-Chip Optical Interconnects Made with Gallium Nitride Nanowires Matt D. Brubaker, Paul T. Blanchard, John B. Schlager, Nano Letters Optical MaterialsEngineeringTwo-nanowire DevicePhotonic Integrated CircuitDetector Nanowire Components	2013	84

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