Paul T. Blanchard

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

John B. Schlager, Kris A. Bertness, Paul T. Blanchard et al. · Journal of Applied Physics · 2008 · 126 citations

Natural Sciences, Materials Engineering, Materials Science +17

Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

C. Gopalan, Yiyi Ma, Tony Gallo et al. · Solid-State Electronics · 2010 · 125 citations

Engineering, Computer Engineering, Electrical Engineering +13

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

Norman A. Sanford, Paul T. Blanchard, K. A. Bertness et al. · Journal of Applied Physics · 2010 · 99 citations

Engineering, Materials Engineering, Materials Science +17

Field‐Effect Transistors Based on Oligothienylenevinylenes: From Solution π‐Dimers to High‐Mobility Organic Semiconductors

Jörg Ackermann, Paul T. Blanchard, Jean‐Manuel Raimundo et al. · Advanced Materials · 2003 · 97 citations

Engineering, Chemistry, Materials Science +14

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Matt D. Brubaker, Shannon M. Duff, Todd E. Harvey et al. · Crystal Growth & Design · 2015 · 85 citations

Engineering, Materials Engineering, Materials Science +17