Paul T. Blanchard

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

John B. Schlager, Kris A. Bertness, Paul T. Blanchard et al. · Journal of Applied Physics · 2008 · 124 citations

Engineering, Optoelectronic Devices, Time-resolved Photoluminescence +18

Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

C. Gopalan, Yiyi Ma, Tony Gallo et al. · Solid-State Electronics · 2010 · 123 citations

Non-volatile Memory, Electrical Engineering, Engineering +7

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

Norman A. Sanford, Paul T. Blanchard, K. A. Bertness et al. · Journal of Applied Physics · 2010 · 98 citations

Wide-bandgap Semiconductor, Engineering, Transient Photoconductivity +16

Field‐Effect Transistors Based on Oligothienylenevinylenes: From Solution π‐Dimers to High‐Mobility Organic Semiconductors

Jörg Ackermann, Paul T. Blanchard, Jean‐Manuel Raimundo et al. · Advanced Materials · 2003 · 97 citations

Engineering, Organic Electronics, Conjugated Cation Radicals +17

On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

Matt D. Brubaker, Paul T. Blanchard, John B. Schlager et al. · Nano Letters · 2013 · 84 citations

Optical Materials, Engineering, Two-nanowire Device +16