Concepedia

Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

C. Gopalan, Yiyi Ma, Tony Gallo, J. Wang, E.F. Runnion, J. J. Sáenz, Foroozan Koushan, Paul T. Blanchard, Shane Hollmer

Solid-State Electronics · 2010 · 125 citations · 8 references

Concepts

EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice SimulationMemory DevicesMemory ModelingMetal-oxide-semiconductor Field-effect TransistorsCmos Logic CircuitsCmos Logic DesignMemory Circuit DesignRandom-access MemoryResistive Random-access Memory

References

8

Nanoscale Memory Elements Based on Solid-State Electrolytes

Michael N. Kozicki, M. Park, M. Mitkova · IEEE Transactions on Nanotechnology · 2005 · 536 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

Christina Schindler, G. Staikov, Rainer Waser · Applied Physics Letters · 2009 · 308 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

M. Kund, G. Beitel, C. U. Pinnow et al. · 2006 · 250 citations

Engineering, Materials Engineering, Materials Science +15

Silver incorporation in Ge–Se glasses used in programmable metallization cell devices

M. Mitkova, M.N. Kozicki · Journal of Non-Crystalline Solids · 2002 · 154 citations

Natural Sciences, Materials Engineering, Materials Science +11

Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Michael N. Kozicki, M. Balakrishnan, C. Gopalan et al. · 2006 · 98 citations

Engineering, Materials Engineering, Materials Science +17