G. Beitel - Concepedia

Author

G. Beitel

Infineon Technologies (Germany)

Also Known As

G. BEITEL, G. Beitel, Gerhard A. Beitel, Gerhard Beitel, Gerhard A. Beitel

Publications

715

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (Germany)Shell (Netherlands)Toshiba (Japan)

About

G. Beitel is an author at Infineon Technologies (Germany) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	432
2	Applied Physics	7	7	345
3	Chemical Engineering	2	2	82
4	Natural Sciences	1	1	12
5	Biomedical Engineering	1	1	14

G. Beitel

Publications

685

Citations

H-Index

Page 1

	Year	Citations
Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm M. Kund, G. Beitel, C. U. Pinnow, Materials ScienceMemory TechnologyElectrical EngineeringNon-volatile MemoryEngineering	2006	248
Polarization Modulation Infrared Reflection Absorption Spectroscopy of CO Adsorption on Co(0001) under a High-Pressure Regime G. Beitel, Amir Laskov, Heiko Oosterbeek, The Journal of Physical Chemistry	1996	150
A Combined<i>in</i>-<i>Situ</i>PM-RAIRS and Kinetic Study of Single-Crystal Cobalt Catalysts under Synthesis Gas at Pressures up to 300 mbar G. Beitel, C.P.M. De Groot, Heiko Oosterbeek, The Journal of Physical Chemistry B	1997	103
In Situ Monitoring of a Heterogeneous Palladium-Based Polyketone Catalyst Wilhelmus P. Mul, Heiko Oosterbeek, G. Beitel, Angewandte Chemie International Edition Chemical EngineeringCo-assisted Ethene InsertionEngineeringCo/ethene CopolymerizationPolymer Science	2000	70
Fatigue effect in ferroelectric PbZr1−xTixO3 thin films P. Schorn, D. Bräuhaus, U. Böttger, Journal of Applied Physics Materials ScienceMaterials EngineeringMultiferroicsFatigue EffectPb Zr 1	2006	39
A 32-Mb chain FeRAM with segment/stitch array architecture S. Shiratake, Teppei Miyakawa, Yoshinori Takeuchi, IEEE Journal of Solid-State Circuits 32-Mb Chain FeramEngineeringSmall Cell SizeEmerging Memory TechnologyComputer Architecture	2003	17
New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor N. Nagel, R. Bruchhaus, K. Hornik, Non-volatile MemoryEngineeringFerroelectric Random-access MemoryBiomedical EngineeringHigh Density	2004	14
Integration of H<sub>2</sub> barriers for ferroelectric memories based on SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) Walter Hartner, G. Schindler, Peter Bosk, Integrated ferroelectrics Hydrogen BarrierEngineeringFerroelectric Random-access MemoryEncapsulation Barrier LayerChemical Engineering	2000	12
Linear and Nonlinear FEL-SEW Spectroscopic Characterization of Nanometer-Thick Films E. V. Alieva, G. Beitel, L. A. Kuzik, Applied Spectroscopy Optical MaterialsEngineeringLaser ApplicationsMetallic NanomaterialsOptical Properties	1997	12
A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications G. Beitel, H. Wendt, E. Fritsch, Microelectronic Engineering Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringOxide Electronics	1999	10

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