K. A. Bertness - Concepedia

Author

K. A. Bertness

National Renewable Energy Laboratory

Also Known As

K. A. Bertness, K. Bertness, K.A Bertness, K.A. Bertness

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

National Renewable Energy Laboratory National Institute of Standards and Technology Stanford University University of Colorado Boulder

About

K. A. Bertness is an author at National Renewable Energy Laboratory specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	41	1.9K
2	Applied Physics	21	37	1.7K
3	Chemistry	10	10	270
4	Natural Sciences	7	7	214
5	Chemical Engineering	3	3	61

K. A. Bertness

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
29.5%-efficient GaInP/GaAs tandem solar cells K. A. Bertness, Sarah Kurtz, Daniel J. Friedman, Applied Physics Letters SemiconductorsElectrical EngineeringEngineeringOrganic Solar CellSolar Cell Structures	1994	311
Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers C. H. Henry, R. A. Logan, K. A. Bertness Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceOptical Transmission SystemLaser Applications	1981	299
Nucleation conditions for catalyst-free GaN nanowires K. A. Bertness, Alexana Roshko, Lorelle M. Mansfield, Journal of Crystal Growth EngineeringNanotechnologyApplied PhysicsGan Power DeviceNucleation Conditions	2006	106
Growth of the room temperature Au/Si(111)-7×7 interface J. J. Yeh, J. Hwang, K. A. Bertness, Physical Review Letters Materials ScienceAbrupt InterfaceSurface CharacterizationSi 2PEngineering	1993	103
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy Norman A. Sanford, Paul T. Blanchard, K. A. Bertness, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTransient PhotoconductivityOptoelectronic DevicesSemiconductors	2010	98
Accelerated publication 30.2% efficient GaInP/GaAs monolithic two‐terminal tandem concentrator cell Daniel J. Friedman, Sarah Kurtz, K. A. Bertness, Progress in Photovoltaics Research and Applications Electrical EngineeringEngineeringGa 0.5Grid DesignPublication 30.2	1995	97
Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages Joseph J. Brown, Alicia I. Baca, K. A. Bertness, Sensors and Actuators A Physical Materials ScienceEngineeringMems Test StagesNanotechnologyApplied Physics	2010	63
Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces K. A. Bertness, J. J. Yeh, D. J. Friedman, Physical review. B, Condensed matter Ii-vi SemiconductorEpitaxial GrowthGrowth StructureEngineeringElectron Spectroscopy	1988	56
Band-gap narrowing in ordered Ga0.47In0.53As D. J. Arent, M. Bode, K. A. Bertness, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsCrystalline Defects	1993	50
Surface shifts in the In 4<i>d</i>and P 2<i>p</i>core-level spectra of InP(110) T. Kendelewicz, P. H. Mahowald, K. A. Bertness, Physical review. B, Condensed matter P 2EngineeringSurface Core-level ShiftsChemistryElectronic Structure	1987	44

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