Applied Physics Letters · 1994 · 314 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsSolar Photovoltaic SystemsSolar RadiationCell DesignHeterojunction Solar CellsMulti-junction Solar CellsPhotovoltaic SystemsSolar Cell Device PhysicsSolar Cell FabricationSurface Passivation LayersTandem Solar Cells
We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
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A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy et al. · Applied Physics Letters · 1989 · 273 citations
Effect of growth rate on the band gap of Ga0.5In0.5P
Sarah Kurtz, J. M. Olson, A. Kibbler · Applied Physics Letters · 1990 · 120 citations