J. M. Olson - Concepedia

Author

J. M. Olson

Also Known As

J. M. OLSON, J. M. Olson, J. Olson, J.M Olson, J.M. Olson, Jerry M. Olson, Jerry Olson, Olson, J., Olson, J. M., Olson, Jerry

176

Publications

5.5K

Citations

H-Index

111

Concepts

All Affiliations

National Renewable Energy Laboratory Lawrence Berkeley National Laboratory Energy Research Institute University of Utah

About

J. M. Olson is an author at National Renewable Energy Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	74	4.7K
2	Applied Physics	29	68	4.5K
3	Natural Sciences	5	5	333
4	Education	1	1	11
5	Law	1	1	29

J. M. Olson

Publications

Citations

H-Index

Page 1

	Year	Citations
1-eV solar cells with GaInNAs active layer Daniel J. Friedman, John F. Geisz, Sarah Kurtz, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsPhotovoltaic SystemSolar Cells	1998	416
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction John F. Geisz, Sarah Kurtz, M. W. Wanlass, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOrganic Solar CellOptoelectronic DevicesPhotovoltaics	2007	394
29.5%-efficient GaInP/GaAs tandem solar cells K. A. Bertness, Sarah Kurtz, Daniel J. Friedman, Applied Physics Letters SemiconductorsElectrical EngineeringEngineeringOrganic Solar CellSolar Cell Structures	1994	311
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell J. M. Olson, Sarah Kurtz, A. Kibbler, Applied Physics Letters Wide-bandgap SemiconductorEngineeringEnergy EfficiencySemiconductor MaterialsGa0.5in0.5p Homojunction	1990	310
Photocurrent of 1eV GaInNAs lattice-matched to GaAs John F. Geisz, Daniel J. Friedman, J. M. Olson, Journal of Crystal Growth PhotonicsEngineeringApplied PhysicsPhotoelectric MeasurementOptoelectronics	1998	291
Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x C. Skierbiszewski, P. Perlin, P. Wiśniewski, Applied Physics Letters SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringDramatic Increase	2000	247
Structural changes during annealing of GaInAsN Sarah Kurtz, Jennifer M. Webb, Lynn Gedvilas, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic Devices	2001	240
The influence of spectral solar irradiance variations on the performance of selected single-junction and multijunction solar cells P. Faine, Sarah Kurtz, C. Riordan, Solar Cells Electrical EngineeringEngineeringEnergy EfficiencyOrganic Solar CellApplied Physics	1991	185
Effect of nitrogen on the band structure of GaInNAs alloys W. Shan, W. Walukiewicz, Joel W. Ager, Journal of Applied Physics Aluminium NitrideWide-bandgap SemiconductorEngineeringEnergetic LocationSemiconductors	1999	163
Projected performance of three- and four-junction devices using GaAs and GaInP Sarah Kurtz, D. Myers, J. M. Olson Radiative Heat TransferEngineeringEnergy EfficiencyThermal RadiationPhotovoltaics	2002	138

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