Florian Furtmayr

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Marı́a de la Mata, César Magén, Jaume Gàzquez et al. · Nano Letters · 2012 · 166 citations · Full text

Aluminium Nitride, Polarity Assignment, Engineering +19

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Florian Furtmayr, Martin Vielemeyer, M. Stutzmann et al. · Journal of Applied Physics · 2008 · 147 citations · Full text

Materials Science, Epitaxial Growth, Engineering +12

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Florian Furtmayr, Martin Vielemeyer, M. Stutzmann et al. · Journal of Applied Physics · 2008 · 102 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Jordi Arbiol, Sònia Estradé, Joan Daniel Prades et al. · Nanotechnology · 2009 · 94 citations

Wide-bandgap Semiconductor, Engineering, Mg Concentration +16

Self-Assembled GaN Nanowires on Diamond

Fabian Schuster, Florian Furtmayr, Reza R. Zamani et al. · Nano Letters · 2012 · 77 citations

Materials Science, Diamond-like Carbon, Electrical Engineering +13