Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

The High-k Solution

M. Bohr, R. Chau, T. Ghani et al. · IEEE Spectrum · 2007 · 382 citations

Engineering, Computer Engineering, Electrical Engineering +11

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

Michel Depas, Bert Vermeire, Paul Mertens et al. · Solid-State Electronics · 1995 · 261 citations

Engineering, Materials Engineering, Materials Science +8

Experimental derivation of the source and drain resistance of MOS transistors

P.I. Suciu, R.L. Johnston · IEEE Transactions on Electron Devices · 1980 · 175 citations

Engineering, Electrical Engineering, Electronic Materials +15

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

Journal of Applied Physics · 2005 · 148 citations · Full text

Natural Sciences, Materials Science, Physics +17

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

UCL Discovery (University College London) · 2005 · 128 citations

Natural Sciences, Materials Science, Physics +17