J. Da̧browski - Concepedia

Author

J. Da̧browski

Institut für Solartechnologien (Germany)ORCID

Also Known As

Dabrowski, J., Dabrowski, Jaroslaw, Grzegorz Kozlowski, J Dabrowski, J Da̧browski, J Dąbrowski, J. Dabrowski, J. Da̧browski, J. Dąbrowski, J. DĄBROWSKI

173

Publications

3.7K

Citations

H-Index

Concepts

All Affiliations

Institut für Solartechnologien (Germany)Leibniz Institute for High Performance Microelectronics Brandenburg University of Technology Cottbus-Senftenberg Fritz Haber Institute of the Max Planck Society KTH Royal Institute of Technology

About

J. Da̧browski is an author at Institut für Solartechnologien (Germany) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	53	2.4K
2	Applied Physics	27	48	2.2K
3	Chemistry	10	10	305
4	Natural Sciences	4	4	174
5	Chemical Engineering	3	3	97

J. Da̧browski

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>EL</mml:mi><mml:mn>2</mml:mn><mml:mn/></mml:math>? J. Da̧browski, Matthias Scheffler Physical Review Letters	1988	268
Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface J. Da̧browski, Matthias Scheffler Applied Surface Science Materials ScienceSurface CharacterizationStructural PropertiesSelf-consistent StudyEngineering	1992	252
A Graphene-Based Hot Electron Transistor Sam Vaziri, Grzegorz Łupina, Christoph Henkel, Nano Letters	2013	237
Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment J. Da̧browski, H.‐J. Müssig, G. A. Wolff Physical Review Letters Materials ScienceSurface CharacterizationEngineeringPhysicsCalculated Surface Energy	1994	193
Isolated arsenic-antisite defect in GaAs and the properties of<i>EL</i>2 J. Da̧browski, Matthias Scheffler Physical review. B, Condensed matter SemiconductorsMaterials ScienceOther Point DefectsEngineeringArsenic-antisite Defect	1989	179
Vertical Graphene Base Transistor Wolfgang Mehr, J. Da̧browski, J. Christoph Scheytt, IEEE Electron Device Letters	2012	155
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications Ch. Walczyk, Christian Wenger, Rakesh Sohal, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesConduction Process	2009	105
Photoemission and <i>ab initio</i> theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A. Fissel, J. Da̧browski, H. J. Osten Journal of Applied Physics EngineeringSemiconductor NanostructuresNanoelectronicsFilm FormationMolecular Beam Epitaxy	2002	103
Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors Matthias Scheffler, J. Da̧browski Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties EngineeringGa VacancyVibrational ModesArsenic ImpurityDefect Tolerance	1988	101
Titanium-added praseodymium silicate high-k layers on Si(001) Thomas Schroeder, J. Da̧browski, Anil U. Mane, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringMaterial AnalysisEngineering	2005	80

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