Concepedia

J. Da̧browski

JD

61

Publications

3.2K

Citations

30

H-Index

1988

Active since

Affiliations

Institut für Solartechnologien (Germany)(Current)

Leibniz Institute for High Performance Microelectronics

Brandenburg University of Technology Cottbus-Senftenberg

Fritz Haber Institute of the Max Planck Society

KTH Royal Institute of Technology

J. Da̧browski is an author at Institut für Solartechnologien (Germany) specializing in engineering, applied physics, and materials science.

ORCID

Top concepts

Publications per year

1988–2023

61

Publications

61

Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>EL</mml:mi><mml:mn>2</mml:mn><mml:mn/></mml:math>?

J. Da̧browski, Matthias Scheffler · Physical Review Letters · 1988 · 268 citations

Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface

J. Da̧browski, Matthias Scheffler · Applied Surface Science · 1992 · 252 citations

, , +8

A Graphene-Based Hot Electron Transistor

Sam Vaziri, Grzegorz Łupina, Christoph Henkel et al. · Nano Letters · 2013 · 237 citations

Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment

J. Da̧browski, H.‐J. Müssig, G. A. Wolff · Physical Review Letters · 1994 · 193 citations

, , +13

Isolated arsenic-antisite defect in GaAs and the properties of<i>EL</i>2

J. Da̧browski, Matthias Scheffler · Physical review. B, Condensed matter · 1989 · 179 citations

, , +14

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