H.‐J. Müssig - Concepedia

Author

H.‐J. Müssig

Institut für Solartechnologien (Germany)

Also Known As

H-J Müssig, H. - J. Mussig, H. J. Müssig, H.-J Müssig, H.-J. Mussig, H.-J. Müssig, H.-J. Müssig, H.J Müssig, H.J. Mussig, H.J. Müssig

Publications

Citations

H-Index

Concepts

All Affiliations

Institut für Solartechnologien (Germany)Leibniz Institute for High Performance Microelectronics Technische Universität Dresden Aixtron (Germany)Brandenburg University of Technology Cottbus-Senftenberg

About

H.‐J. Müssig is an author at Institut für Solartechnologien (Germany) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	49	1.7K
2	Applied Physics	27	46	1.6K
3	Chemistry	11	11	246
4	Natural Sciences	5	5	115
5	Chemical Engineering	1	1	28

H.‐J. Müssig

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment J. Da̧browski, H.‐J. Müssig, G. A. Wolff Physical Review Letters Materials ScienceSurface CharacterizationEngineeringPhysicsCalculated Surface Energy	1994	193
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications Ch. Walczyk, Christian Wenger, Rakesh Sohal, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesConduction Process	2009	105
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions H. J. Osten, J. P. Liu, H.‐J. Müssig Applied Physics Letters EngineeringOptoelectronic DevicesBand GapSemiconductor NanostructuresSemiconductors	2002	93
Titanium-added praseodymium silicate high-k layers on Si(001) Thomas Schroeder, J. Da̧browski, Anil U. Mane, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringMaterial AnalysisEngineering	2005	80
Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors Christian Wenger, Mindaugas Lukosius, O. Seifarth, Journal of Applied Physics Electrical EngineeringDielectricsEngineeringPhysicsSufficient Capacitance-voltage Linearity	2008	57
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics Christian Wenger, J. Da̧browski, P. Zaumseil, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringDielectricsEngineeringPr2o3 Dielectrics	2004	50
Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization Thomas Schroeder, J. Da̧browski, Christian Wenger, Journal of Applied Physics EngineeringPr Silicate LayersGate Dielectric ApplicationsSilicon On InsulatorDielectric Layers	2006	45
Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications Grzegorz Kozłowski, J. Da̧browski, Christian Wenger, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringCubic Perovskite Phase	2008	42
On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) Thomas Schroeder, P. Zaumseil, G. Weidner, Journal of Applied Physics Materials ScienceMaterials EngineeringIncidence X-ray DiffractionPraseodymium Sesquioxide FilmsEngineering	2006	42
Dielectric and structural properties of thin SrHfO3 layers on TiN Grzegorz Kozłowski, J. Da̧browski, Piotr Dudek, Applied Physics Letters Materials EngineeringMaterials ScienceMaterial AnalysisEngineeringCrystalline Defects	2008	39

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