H. J. Osten - Concepedia

Author

H. J. Osten

Leibniz Institute for High Performance Microelectronics

Also Known As

H J Osten, H Jörg Osten, H. J. OSTEN, H. J. Osten, H. Jorg Osten, H. Jorg. Osten, H. Jörg Osten, H.-J Osten, H.-J. Osten, H.-Jörg Osten

147

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for High Performance Microelectronics University of Illinois Chicago Institute of Molecular Biology Institut für Solartechnologien (Germany)

About

H. J. Osten is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	69	2.6K
2	Applied Physics	33	63	2.5K
3	Natural Sciences	14	18	517
4	Medicine	4	4	130
5	Chemical Engineering	1	1	41

H. J. Osten

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon H. J. Osten, E. Bugiel, P. Zaumseil Applied Physics Letters Inverse TetragonalSi1−x−ygexcy LayersEngineeringSigec StructureIntegrated Circuits	1994	139
Suppressed diffusion of boron and carbon in carbon-rich silicon H. Rücker, B. Heinemann, Wilfried Röpke, Applied Physics Letters Materials ScienceBoron NitrideSolid SolubilityEngineeringSuppressed Diffusion	1998	134
Photoemission and <i>ab initio</i> theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A. Fissel, J. Da̧browski, H. J. Osten Journal of Applied Physics EngineeringSemiconductor NanostructuresNanoelectronicsFilm FormationMolecular Beam Epitaxy	2002	103
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions H. J. Osten, J. P. Liu, H.‐J. Müssig Applied Physics Letters EngineeringOptoelectronic DevicesBand GapSemiconductor NanostructuresSemiconductors	2002	93
Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−<i>y</i>C<i>y</i> on Si(001) H. J. Osten, Myeongcheol Kim, K. Pressel, Journal of Applied Physics EngineeringCrystal Growth TechnologyCarbon Incorporation BehaviorSilicon On InsulatorSemiconductor Nanostructures	1996	91
Growth and properties of strained Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub>layers S.C. Jain, H. J. Osten, B. Dietrich, Semiconductor Science and Technology SemiconductorsMaterials ScienceMaterials EngineeringStrained SuperlatticesEngineering	1995	89
Surfactant-controlled solid phase epitaxy of germanium on silicon H. J. Osten, J. Klatt, G. Lippert, Physical Review Letters Materials ScienceMaterials EngineeringAntimony SurfactantIsland Formation StageEngineering	1992	86
Investigation of the high temperature behavior of strained Si1−<i>y</i>C<i>y</i> /Si heterostructures Gunter Fischer, P. Zaumseil, E. Bugiel, Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor DeviceSemiconductor NanostructuresSemiconductors	1995	60
Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy H. J. Osten, J. Griesche, Silvia Scalese Applied Physics Letters Epitaxial Si1−ycyEngineeringComputational ChemistryChemistrySilicon On Insulator	1999	59
Observation of the formation of a carbon-rich surface layer in silicon H. J. Osten, M. Methfessel, G. Lippert, Physical review. B, Condensed matter EngineeringSilicon CrystalChemistrySilicon On InsulatorNanoelectronics	1995	59

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