H. J. Osten

Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

H. J. Osten, E. Bugiel, P. Zaumseil · Applied Physics Letters · 1994 · 139 citations · Full text

Inverse Tetragonal, Si1−x−ygexcy Layers, Engineering +18

Suppressed diffusion of boron and carbon in carbon-rich silicon

H. Rücker, B. Heinemann, Wilfried Röpke et al. · Applied Physics Letters · 1998 · 134 citations

Materials Science, Boron Nitride, Solid Solubility +9

Photoemission and <i>ab initio</i> theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

A. Fissel, J. Da̧browski, H. J. Osten · Journal of Applied Physics · 2002 · 103 citations

Engineering, Semiconductor Nanostructures, Nanoelectronics +17

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

H. J. Osten, J. P. Liu, H.‐J. Müssig · Applied Physics Letters · 2002 · 93 citations

Engineering, Optoelectronic Devices, Band Gap +17

Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−<i>y</i>C<i>y</i> on Si(001)

H. J. Osten, Myeongcheol Kim, K. Pressel et al. · Journal of Applied Physics · 1996 · 91 citations

Engineering, Crystal Growth Technology, Carbon Incorporation Behavior +16