E. Bugiel

Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Udo Römer, Robby Peibst, Tobias Ohrdes et al. · Solar Energy Materials and Solar Cells · 2014 · 220 citations

Engineering, Physics, Nanoelectronics +8

Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

Robby Peibst, Udo Römer, Yevgeniya Larionova et al. · Solar Energy Materials and Solar Cells · 2016 · 211 citations

Electrical Engineering, Whole Story, Engineering +9

Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

H. J. Osten, E. Bugiel, P. Zaumseil · Applied Physics Letters · 1994 · 139 citations · Full text

Inverse Tetragonal, Si1−x−ygexcy Layers, Engineering +18

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Electrical Engineering, Engineering, Vlsi Design +8

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

A. Fissel, Zahad Elassar, O. Kirfel et al. · Journal of Applied Physics · 2006 · 100 citations

Materials Science, Engineering, Surface Science +9