Optimized thermal processing for Ti-capped CoSi2 for 0.13 μm technology

Silicides for integrated circuits: TiSi2 CoSi2

Karen Maex · Materials Science and Engineering R Reports · 1993 · 234 citations

Engineering, Materials Engineering, Materials Science +14

A study of the leakage mechanisms of silicided <i>n</i>+/<i>p</i> junctions

Ruizhe Liu, D. S. Williams, W.T. Lynch · Journal of Applied Physics · 1988 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

Salicides: materials, scaling and manufacturability issues for future integrated circuits (invited)

J. A. Kittl, Wei-Tsun Shiau, Q. Z. Hong et al. · Microelectronic Engineering · 2000 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +4

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

Ken Goto, A. Fushida, J. Watanabe et al. · IEEE Transactions on Electron Devices · 1999 · 43 citations

Engineering, Electrical Engineering, Materials Science +16

Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si

Francesco La Via, Alessandra Alberti, V. Raineri et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 24 citations

Engineering, Materials Engineering, Materials Science +17