Deep energy levels in RuO2∕4H–SiC Schottky barrier structures

Abstract

RuO 2 ∕ 4 H – SiC Schottky diode structures based on n-type 4H–SiC (7×1017cm−3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60μΩcm for Schottky barrier heights of approximately 0.88eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85eV with reference to the conduction band.