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Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0 0 0 1) by vertical hot-wall chemical vapor deposition

Materials EngineeringMaterials ScienceEngineeringApplied PhysicsFast Epitaxial GrowthCarbideSemiconductor Device FabricationEpitaxial GrowthChemical Vapor DepositionC/si Ratio