Applied Physics Letters · 2002 · 115 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsStrain EngineeringWide Band Gap SemiconductorsWide-bandgap SemiconductorsBiaxial StrainEpitaxial Growth Of Wide-bandgap SemiconductorsFull Width At Half MaximumGallium NitrideMetalorganic Vapor Phase EpitaxySiliconThermal Expansion CoefficientThermal Expansion Mismatch
The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO2 grid mask pattern. Within window regions of (0.2–0.5) mm×(0.2–0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows.
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