Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Materials Engineering, Materials Science, Electrical Engineering +15

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Materials Engineering, Materials Science, Engineering +5

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu et al. · Thin Solid Films · 1988 · 268 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +9

Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC

T. Sasaki, Takashi Matsuoka · Journal of Applied Physics · 1988 · 189 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy

Zlatko Sitar, Michael J. Paisley, Bangbo Yan et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 102 citations