Michael J. Paisley

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Michael J. Paisley, Zlatko Sitar, J. B. Posthill et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 362 citations

Engineering, Materials Engineering, Materials Science +17

Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy

Zlatko Sitar, Michael J. Paisley, Bangbo Yan et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 102 citations

Engineering, Materials Engineering, Materials Science +17

Structure of the carrot defect in 4H-SiC epitaxial layers

Mourad Benamara, Xuan Zhang, Marek Skowroński et al. · Applied Physics Letters · 2005 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices

Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum · 2006 · 91 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Xuan Zhang, Marek Skowroński, K. X. Liu et al. · Journal of Applied Physics · 2007 · 73 citations

Engineering, Materials Engineering, Materials Science +17