Applied Physics Letters · 2002 · 21 citations · 11 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor PhysicsTwo-dimensional SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideHall EffectHigh-electron-mobility TransistorsInterband TransitionsMetalorganic Chemical Vapor DepositionTwo-dimensional Electron GasesValence BandValence Band Structure
Al 0.15 Ga 0.85 N/GaN high-electron-mobility transistor (HEMT) structures with various δ-doping concentrations and spacer thicknesses grown on sapphire by metalorganic chemical-vapor deposition are investigated. The Hall mobility is as high as 1333 cm2/V s at room temperature and 6330 cm2/V s at 77 K. Two-dimensional electron gas (2DEG) phenomena, which have not been clearly resolved in the literature, are observed by photoluminescence (PL) spectra at low temperature in this study. The PL spectra peaks of the interband transitions from 2DEG subbands to the valence band are in the range from 3.486 to 3.312 eV. The effects of the strain caused by different Al fractions of the top layer, and that of the spacer thickness on the 2DEG phenomena are discussed. Redshifts due to temperature variations for various HEMT structures are observed in 2DEG subbands and in the band-edge emission, which is believed to be evidence of interband transitions from 2DEG subbands to valence bands.
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Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 214 citations
High transconductance-normally-off GaN MODFETs
A. Özgür, W. Kim, Zongjian Fan et al. · Electronics Letters · 1995 · 141 citations