Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface

Abstract

Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.