Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface

Shinji Togawa, Xinming Huang, Koji Izunome, +2

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics +6

Oxygen transport from a silica crucible in Czochralski silicon growth

Shinji Togawa, Koji Izunome, Soroku Kawanishi, +3

Journal of Crystal Growth

Materials EngineeringMolecular SieveEngineeringCrystal Growth TechnologyApplied Physics +5

Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface

Eiji Toyoda, Akira Sakai, Hiromichi Isogai, +5

Japanese Journal of Applied Physics

EngineeringMechanical EngineeringChemistrySilicon On InsulatorWafer Scale Processing +15

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Lei Zhong, Ryuji Takeda, Koji Izunome, +7

Applied Physics Letters

EngineeringSilicon On InsulatorSingle StepsVicinal SiliconMaterials Science +14

Recovery of microstructure and surface topography of grinding-damaged silicon wafers by nanosecond-pulsed laser irradiation

Jiwang Yan, Shin Sakai, Hiromichi Isogai, +1

Semiconductor Science and Technology

EngineeringMechanical EngineeringLaser AblationDiamond GrindingLaser Irradiation +17

Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop

Sang-Ik Chung, Koji Izunome, Atsushi Yokotani, +1

Japanese Journal of Applied Physics

EngineeringLiquid-liquid FlowMechanical EngineeringWettingMolten Silicon +20

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

Takashi Yamaha, Osamu Nakatsuka, Shotaro Takeuchi, +5

ECS Transactions

Materials ScienceMaterials EngineeringIi-vi SemiconductorGesisn Ternary AlloyEngineering +11

Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

Koji Izunome, Hiroshi Shirai, Kazuhiko Kashima, +2

Applied Physics Letters

Materials ScienceChemical EngineeringEngineeringHydrogen AnnealingCrystalline Defects +8

Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition

Koji Izunome, Yoshihiko Saito, Hiroyasu Kubota

Japanese Journal of Applied Physics

Atomic Force MicroscopyEngineeringTerrace FormationSilicon On InsulatorPeriodic Step +14

Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al₂O₃/SiO₂hybrid buried oxide layers

Yoshihiko Moriyama, Keiji Ikeda, Shotaro Takeuchi, +5

Applied Physics Express

Materials ScienceOxide HeterostructuresSemiconductorsEngineeringOxide Electronics +12