R. Stengl

On the morphology and the electrochemical formation mechanism of mesoporous silicon

V. Lehmann, R. Stengl, A Luigart · Materials Science and Engineering B · 2000 · 373 citations

Materials Science, Molecular Sieve, Engineering +10

A Model for the Silicon Wafer Bonding Process

R. Stengl, T. Y. Tan, U. Gösele · Japanese Journal of Applied Physics · 1989 · 275 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

SiGe bipolar technology for automotive radar applications

J. Böck, Hans‐Wilhelm Schiffer, K. Auflnger et al. · 2004 · 163 citations

Radar, Millimeter Wave Technology, Engineering +11

Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment

R. Stengl, K.-Y. Ahn, U. Gösele · Japanese Journal of Applied Physics · 1988 · 96 citations

Engineering, Mechanical Engineering, Integrated Circuits +16

Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding

Kiyoshi Mitani, Volker Lehmann, R. Stengl et al. · Japanese Journal of Applied Physics · 1991 · 86 citations

Engineering, Silicon On Insulator, Bubble Nucleation +16