T. Y. Tan - Concepedia

Author

T. Y. Tan

Duke University ORCID

Also Known As

T Y Tan, T. Tan, T. Y. Tan, T.Y. Tan, T. Y. Tan, Tan, T., Tengmeng Tan, The Y. Tan

158

Publications

4.7K

Citations

H-Index

Concepts

All Affiliations

Duke University Max Planck Institute of Microstructure Physics IBM Research - Thomas J. Watson Research Center IBM (United States)MCNC Research and Development Institute

About

T. Y. Tan is an author at Duke University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	66	4.2K
2	Applied Physics	34	64	4.4K
3	Natural Sciences	8	8	375
4	Chemical Engineering	4	4	196
5	Biostatistics	1	1	57

T. Y. Tan

Publications

4.5K

Citations

H-Index

Page 1

	Year	Citations
Point defects, diffusion processes, and swirl defect formation in silicon T. Y. Tan, U. G�sele Applied Physics A Materials SciencePoint DefectsEngineeringPhysicsSurface Science	1985	450
Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si T. Y. Tan, E.E. Gardner, W. K. Tice Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringDislocation InteractionIntrinsic Impurity	1977	388
Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy Lukas Schubert, P. Werner, N. D. Zakharov, Applied Physics Letters EngineeringSurface NanotechnologyChemistryNanoscale ChemistryNanostructure Synthesis	2004	314
Oxygen diffusion and thermal donor formation in silicon U. G�sele, T. Y. Tan Applied Physics A Applied PhysicsSemiconductor MaterialSemiconductor Device FabricationThermal Donor FormationSilicon On Insulator	1982	282
A Model for the Silicon Wafer Bonding Process R. Stengl, T. Y. Tan, U. Gösele Japanese Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorWafer Scale ProcessingElectronic Packaging	1989	275
Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon T. Y. Tan, U. Gösele Applied Physics Letters Point DefectsEngineeringSilicon On InsulatorDefect ToleranceNanoelectronics	1982	117
On the diamond-cubic to hexagonal phase transformation in silicon T. Y. Tan, H. Föll, S. M. Hu Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties SemiconductorsMaterials ScienceIon ImplantationWafer Scale ProcessingEngineering	1981	107
Chemical and structural aspects of reaction at the Ti/Si interface R. Butz, Gary W. Rubloff, T. Y. Tan, Physical review. B, Condensed matter EngineeringChemistryTi/si InterfaceSilicon On InsulatorChemical Engineering	1984	105
Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon T. Y. Tan Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Point DefectsEngineeringAtomic ModellingHomogeneous NucleationDefect Tolerance	1981	104
A “smarter-cut” approach to low temperature silicon layer transfer Qiaoling Tong, Roland W. Scholz, U. Gösele, Applied Physics Letters Materials ScienceImplanted Boron PeakElectrical EngineeringSilicon WafersEngineering	1998	103

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