Applied Physics Letters · 1994 · 79 citations · 8 references
Materials ScienceSurface CharacterizationElectrical EngineeringEngineeringTunneling MicroscopyNanoelectronicsScanning Probe MicroscopySurface ScienceApplied PhysicsSurface AnalysisSemiconductor MaterialConducting ProbeResistance MicroscopeMicroelectronicsCompound SemiconductorContact AreaSemiconductor Doping
A new technique for the two-dimensional delineation of P-N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10−4 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements.
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Limits of imaging resolution for atomic force microscopy of molecules
T. P. Weihs, Z. Nawaz, Suzanne Jarvis et al. · Applied Physics Letters · 1991 · 123 citations
Atomic Force Microscopy, Engineering, Multiscale Mechanics +26