Dopant migration in silicon during implantation/annealing measured by scanning tunneling microscopy

Abstract

The spatial correlation between the lateral distribution of the doping type and the former implantation mask edge was investigated by scanning tunneling microscopy (STM) measurements. The position of the former mask edge was determined from surface steps resolved by STM topography measurements. Current imaging tunneling spectroscopy (CITS) data recorded simultaneously allowed to detect the transition from a high doping level with an ohmic I–V curve to a lower doping level displaying a Schottky barrier behavior. The influence of different annealing treatments on the position of this transition was investigated.