Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

A theory of transistor cutoff frequency (f_T) falloff at high current densities

Charles Kirk · IRE Transactions on Electron Devices · 1962 · 574 citations

Engineering, Electrical Engineering, Microelectronics +16

Recent developments in SiC single-crystal electronics

P. A. Ivanov, V. E. Chelnokov · Semiconductor Science and Technology · 1992 · 262 citations

Engineering, Electrical Engineering, Materials Science +17

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Tsunenobu Kimoto, N. Miyamoto, H. Matsunami · IEEE Transactions on Electron Devices · 1999 · 221 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries

John R. Hauser · IEEE Transactions on Electron Devices · 1964 · 207 citations

Engineering, Electrical Engineering, Circuit Theory +12

1800 V NPN bipolar junction transistors in 4H-SiC

Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations

Engineering, Electrical Engineering, Materials Science +17