A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

Engineering, Electrical Engineering, Microelectronics +16

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Woo Young Choi, Byung‐Gook Park, Jong Duk Lee et al. · IEEE Electron Device Letters · 2007 · 1.9K citations

Engineering, Electrical Engineering, Microelectronics +16

A new recombination model for device simulation including tunneling

G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers · IEEE Transactions on Electron Devices · 1992 · 914 citations

Engineering, Electrical Engineering, Microelectronics +16

A physically based mobility model for numerical simulation of nonplanar devices

C. Lombardi, Stefano Manzini, Antonio Saporito et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 810 citations

Engineering, Electrical Engineering, Materials Science +17

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan et al. · 2008 · 491 citations

Engineering, Electrical Engineering, Physics +17