2006 · 29 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGain CompressionGallium NitrideHigh-electron-mobility TransistorsOperating VoltagePower Added EfficiencyPower EfficiencyPower OutputTemperature Dependence
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> =30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB
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Very-high power density AlGaN/GaN HEMTs
Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations
An over 200-W output power GaN HEMT push-pull amplifier with high reliability
T. Kikkawa, Toru Maniwa, Hiroyuki Hayashi et al. · 2004 · 71 citations