Modeling of hot-carrier stressed characteristics of submicrometer pMOSFETs

Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's

Mitsumasa Koyanagi, A.G. Lewis, Richard J. Martin et al. · IEEE Transactions on Electron Devices · 1987 · 135 citations

Engineering, Electrical Engineering, Electronic Materials +16

Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs

T.C. Ong, P.K. Ko, Chenming Hu · IEEE Transactions on Electron Devices · 1990 · 113 citations

Engineering, Electrical Engineering, Microelectronics +16

Explanation and model for the logarithmic time dependence of p-MOSFET degradation

Q. Wang, M. Brox, Wolfgang H. Krautschneider et al. · IEEE Electron Device Letters · 1991 · 82 citations

Engineering, Electrical Engineering, Electronic Materials +16

Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

N. S. Saks, Paul Heremans, Luc Van den hove et al. · IEEE Transactions on Electron Devices · 1986 · 79 citations

Engineering, Electrical Engineering, Electronic Materials +15

A model for the time- and bias-dependence of p-MOSFET degradation

M. Brox, A. v. Schwerin, Q. Wang et al. · IEEE Transactions on Electron Devices · 1994 · 46 citations

Engineering, Electrical Engineering, Electronic Materials +16