A.G. Lewis

Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

I‐Wen Wu, T.Y. Huang, W. B. Jackson et al. · IEEE Electron Device Letters · 1991 · 244 citations

Engineering, Plasma Hydrogenation, Thin Film Process Technology +19

Interdecadal variation in developmental timing of <i>Neocalanus plumchrus</i> populations at Ocean Station P in the subarctic North Pacific

David L. Mackas, Robert H Goldblatt, A.G. Lewis · Canadian Journal of Fisheries and Aquatic Sciences · 1998 · 199 citations

Interdecadal Variation, Engineering, Neocalanus Plumchrus +18

Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's

Mitsumasa Koyanagi, A.G. Lewis, Richard J. Martin et al. · IEEE Transactions on Electron Devices · 1987 · 134 citations

Electrical Engineering, Engineering, Hardware Reliability +11

Physical models for degradation effects in polysilicon thin-film transistors

M. Hack, A.G. Lewis, I‐Wen Wu · IEEE Transactions on Electron Devices · 1993 · 128 citations

Device Modeling, Electrical Engineering, Bias Stress Conditions +12

Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing

I‐Wen Wu, W. B. Jackson, T.Y. Huang et al. · IEEE Electron Device Letters · 1990 · 116 citations

Engineering, P-channel Polysilicon Tfts, Polysilicon Channel +18