T.Y. Huang

Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

I‐Wen Wu, T.Y. Huang, W. B. Jackson et al. · IEEE Electron Device Letters · 1991 · 244 citations

Engineering, Plasma Hydrogenation, Thin Film Process Technology +19

Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing

I‐Wen Wu, W. B. Jackson, T.Y. Huang et al. · IEEE Electron Device Letters · 1990 · 116 citations

Engineering, P-channel Polysilicon Tfts, Polysilicon Channel +18

Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT

I‐Wen Wu, A.G. Lewis, T.Y. Huang et al. · IEEE Electron Device Letters · 1989 · 112 citations

Materials Science, Low-temperature Polysilicon Tft, Electrical Engineering +15

Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films

I‐Wen Wu, A. Chiang, M. Fuse et al. · Journal of Applied Physics · 1989 · 83 citations

Nucleation Rate, Engineering, Integrated Circuits +18

A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel

Horng‐Chih Lin, Ming‐Hsien Lee, C.-J. Su et al. · IEEE Electron Device Letters · 2005 · 75 citations

Engineering, Nanocomputing, Flexible Sensor +20