Wolfgang H. Krautschneider

Explanation and model for the logarithmic time dependence of p-MOSFET degradation

Q. Wang, M. Brox, Wolfgang H. Krautschneider et al. · IEEE Electron Device Letters · 1991 · 82 citations

Engineering, Electrical Engineering, Electronic Materials +16

Hole trap related hysteresis in pentacene field-effect transistors

C. Ucurum, H. Goebel, F. A. Yildirim et al. · Journal of Applied Physics · 2008 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

F. A. Yildirim, C. Ucurum, R. R. Schliewe et al. · Applied Physics Letters · 2007 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +17

Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

T. S. Böscke, S. Govindarajan, P. D. Kirsch et al. · Applied Physics Letters · 2007 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17

Vertical MOS transistors with 70 nm channel length

Lorenz Risch, Wolfgang H. Krautschneider, F. Hofmann et al. · IEEE Transactions on Electron Devices · 1996 · 62 citations

Engineering, Electrical Engineering, Materials Science +17