Wolfgang H. Krautschneider

Explanation and model for the logarithmic time dependence of p-MOSFET degradation

Q. Wang, M. Brox, Wolfgang H. Krautschneider et al. · IEEE Electron Device Letters · 1991 · 82 citations

Device Modeling, Electrical Engineering, Engineering +12

Hole trap related hysteresis in pentacene field-effect transistors

C. Ucurum, H. Goebel, F. A. Yildirim et al. · Journal of Applied Physics · 2008 · 77 citations

Device Modeling, Pentacene Transistors, Electrical Engineering +12

Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

F. A. Yildirim, C. Ucurum, R. R. Schliewe et al. · Applied Physics Letters · 2007 · 76 citations

Engineering, Organic Electronics, Polymer Nanocomposites +22

Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

T. S. Böscke, S. Govindarajan, P. D. Kirsch et al. · Applied Physics Letters · 2007 · 69 citations

Engineering, Stable Metal-insulator-metal Capacitors, Chemistry +16

Vertical MOS transistors with 70 nm channel length

Lorenz Risch, Wolfgang H. Krautschneider, F. Hofmann et al. · IEEE Transactions on Electron Devices · 1996 · 62 citations

Electrical Engineering, Engineering, Vlsi Design +11