On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs

Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by <i>C</i>-<i>V</i> profiling

M.A. Rao, E. J. Caine, H. Kroemer et al. · Journal of Applied Physics · 1987 · 197 citations

Engineering, Electrical Engineering, Materials Science +17

A high aspect ratio design approach to millimeter-wave HEMT structures

M.B. Das · IEEE Transactions on Electron Devices · 1985 · 79 citations

Engineering, Electrical Engineering, Microelectronics +13

Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

C. Tedesco, Enrico Zanoni, C. Canali et al. · IEEE Transactions on Electron Devices · 1993 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

Ming-Yih Kao, P.M. Smith, P. Ho et al. · IEEE Electron Device Letters · 1989 · 64 citations

Engineering, Electrical Engineering, Microelectronics +16

High-power V-band pseudomorphic InGaAs HEMT

K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations

Engineering, Electrical Engineering, Materials Science +17